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More than 160 students applied for the 2012 INL Summer Scholarships

More than 160 students applied for an opportunity to work closely with INL researchers. Starting late June, the second edition of INL summer courses will offer 20 students from Portugal and Spain hands-on training in advanced research projects with INL scientists for two months. Scholars will have the opportunity of sharing the initial research steps of an international and multidisciplinary community working on nanotechnology projects, formed by scientists and engineers from all over the world. All candidates will be informed before the end of May about the outcome of their scholarship application.

INL installs LPX Pegasus ASE, a Deep Silicon Etch (DRIE) with a broad range of challenging applications

Advanced Silicon Etch (ASE) is a deep reactive ion etching (DRIE) technique used to rapidly etch deep and high aspect ratio structures in silicon. LPX Pegasus is the continuation of STS’ Advanced Silicon Etch (ASE) technology. Through an in-depth understanding of the Bosch process and with the required hardware, Pegasus is able to provide excellent profile control and selectivity. The increased etch rate and improved uniformity lead to higher throughput and device yield, resulting in increased productivity. This inductively de-coupled plasma (IDP) system uses fluorine-based gases for anisotropic deep silicon trench etching. The 13.56 MHz RF power supply produces high-density, low-pressure, low-energy plasma. This type of plasma allows high selectivity and aspect ratio etching for depths greater than 150 microns and has an expected etch rate better than 15 microns/ min. Used primarily for MEMs devices, the typical materials used in this etcher are silicon wafers covered with photoresist and thin films of silicon dioxide and silicon nitride. The performance improvements that Pegasus brings have numerous benefits for research as well as for end-users. At the moment, the tool is being installed in the INL’s facilities and it is expected that the final validation process will take place the first […]

INL project presented in Mexico during NanoMex’10

In pursue of INL’s outreach program, Jose Rivas, Director General (DG) of the INL, attended the“Simposio: Nanociencias y Nanotecnología” at UAM in Mexico City, 15-16 November and the NanoMex’10 which is the Third International and Interdisciplinary Nanoscience and Nanotechnology Meeting, organized by the National Autonomous University of Mexico (UNAM), in Cuernavaca City (Morelos) 17-19 November. In this meeting, the DG of the INL made the most of the encounters to present the INL and to contact leading important Mexican scientists in the field of Nanotechnology. The goal of NanoMex’10 is to stimulate high-quality interdisciplinary dialogue on the advance, promises and implications of nanoscience and nanotechnology in order to enrich the national decision-making concerning the distribution of benefits, maximization and definition of responsibilities and, the minimization of unnecessary and unwanted costs. It is an initiative nano-UNAM, a group initially formed by the Centre for Interdisciplinary Research in Sciences and Humanities, the Center for Nanoscience and Nanotechnology, the Center for Applied Sciences and Technological Development and the Environmental Nanotechnology University Program. Since 2009, nanoUNAM is conformed by 11 UNAM’s entities and a research university program.

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