News

INL involved in EC´s coordinated approach to promote the safety of nanomaterials

INL involved in EC´s coordinated approach to promote the safety of nanomaterials

The International Iberian Nanotechnology Laboratory (INL) participates in the European Commission’s NANoREG project on the safety of nanomaterials. At INL, the goal of this four-year project is to establish and test specific measurement and characterization methods and offer a wide set of well‐characterized manufactured or engineered nanomaterials (MNMs). The industrial use of nanomaterials has grown significantly, therefore more knowledge about the health and environmental hazard impacts of nanomaterials is necessary. Interest in the use of nanomaterials is considerable, as they can be used to improve product characteristics; for example, nanoparticles help make a surface self-cleaning through a hydrophobic coat of paint; but the safety of these nanoparticles raises questions. The fast development of nanomaterials and their presence on the market make it necessary to evaluate their environmental and health impacts. The project aims at developing guidelines for safe usage, risk management and safety instructions while assessing the need for new legislation. NANoREG is a FP7 project aiming to deliver the answers needed by regulators and legislators on EHS by linking them to scientific evaluation of data and test methods. The NANoREG consortium joins governmental authorities, research institutes and companies from 14 European countries. With this project, we will get not […]

Read more
INL installs LPX Pegasus ASE, a Deep Silicon Etch (DRIE) with a broad range of challenging applications

INL installs LPX Pegasus ASE, a Deep Silicon Etch (DRIE) with a broad range of challenging applications

Advanced Silicon Etch (ASE) is a deep reactive ion etching (DRIE) technique used to rapidly etch deep and high aspect ratio structures in silicon. LPX Pegasus is the continuation of STS’ Advanced Silicon Etch (ASE) technology. Through an in-depth understanding of the Bosch process and with the required hardware, Pegasus is able to provide excellent profile control and selectivity. The increased etch rate and improved uniformity lead to higher throughput and device yield, resulting in increased productivity. This inductively de-coupled plasma (IDP) system uses fluorine-based gases for anisotropic deep silicon trench etching. The 13.56 MHz RF power supply produces high-density, low-pressure, low-energy plasma. This type of plasma allows high selectivity and aspect ratio etching for depths greater than 150 microns and has an expected etch rate better than 15 microns/ min. Used primarily for MEMs devices, the typical materials used in this etcher are silicon wafers covered with photoresist and thin films of silicon dioxide and silicon nitride. The performance improvements that Pegasus brings have numerous benefits for research as well as for end-users. At the moment, the tool is being installed in the INL’s facilities and it is expected that the final validation process will take place the first […]

Read more
1 86 87 88