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Spintronics in Graphene – 11 PhD & 4 Post-Doctoral Positions available

Spintronics in Graphene – 11 PhD & 4 Post-Doctoral Positions available

The SPINOGRAPH – “Spintronics in Graphene” is a Marie Curie Initial Training Network (ITN) providing state-of-the-art training for early-stage researchers (ESR) and Experienced Researchers (ER) in the field of Spintronics in Graphene. The network brings together 9 world-leading partners and offers a total of 11 Early Stage Research (ESR) PhD positions for 36 months and 4 Experienced Researcher (ER) post-doctoral positions for 24 months. Host institutions are INL, Braga, Portugal-Coordinator (2 PhD), AMO GmbH, Aachen, Germany (1 postdoc), CIC Nanogune, San Sebastian, Spain (2 PhD), CNRS, Paris, France (1 postdoc), CSIC Madrid, Spain (2 PhD), Graphenea, San Sebastian, Spain (1 postdoc), University of Aachen, Germany (1 PhD, 1 Postdoc), University of Groningen, Netherlands (2 PhD), University of Manchester, UK (2 PhD). The recruited researchers will participate in challenging and exciting projects at the forefront of research on Spintronics in Graphene and benefit from several network-wide schools, workshops and specific training courses. More information here.

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Brazil, Portugal and Spain Begin Major Collaboration at INL

A call for projects involving Brazilian companies as well as Brazilian research, technology and innovation organisations have been launched. This is the result of the Memorandum of Understanding signed at the International Iberian Nanotechnology Laboratory (INL), March 8th. The agreement signed between the governments of Brazil, Spain and Portugal is based on previous cooperation agreements and establishes the framework for the role of INL in the development of training and research activities in Nanotechnology. The Memorandum of Understanding was signed during the visit of the Brazilian and the Portuguese Ministers of Science and Education, Aloizio Mercadante and Nuno Crato, to INL and it will facilitate the access for Brazilian science, technology, and innovation centres as well as for students, researchers and companies to INL state of the art facilities. The main areas of cooperation are nanodevices, nanoelectronics, nanoparticles applied to nanomedicine, environment control and water and food quality monitoring. link to call Photo: (L-R) Jose Rivas, Director General of INL; Aloizio Mercadante, Brazilian Minister of Education and Science; Nuno Crato, Portuguese Minister of Education and Science; and Paulo Freitas, Deputy Director-General of INL – credit – WAPAphoto.

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INL involved in EC´s coordinated approach to promote the safety of nanomaterials

INL involved in EC´s coordinated approach to promote the safety of nanomaterials

The International Iberian Nanotechnology Laboratory (INL) participates in the European Commission’s NANoREG project on the safety of nanomaterials. At INL, the goal of this four-year project is to establish and test specific measurement and characterization methods and offer a wide set of well‐characterized manufactured or engineered nanomaterials (MNMs). The industrial use of nanomaterials has grown significantly, therefore more knowledge about the health and environmental hazard impacts of nanomaterials is necessary. Interest in the use of nanomaterials is considerable, as they can be used to improve product characteristics; for example, nanoparticles help make a surface self-cleaning through a hydrophobic coat of paint; but the safety of these nanoparticles raises questions. The fast development of nanomaterials and their presence on the market make it necessary to evaluate their environmental and health impacts. The project aims at developing guidelines for safe usage, risk management and safety instructions while assessing the need for new legislation. NANoREG is a FP7 project aiming to deliver the answers needed by regulators and legislators on EHS by linking them to scientific evaluation of data and test methods. The NANoREG consortium joins governmental authorities, research institutes and companies from 14 European countries. With this project, we will get not […]

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INL will award 21 COFUND fellowships

INL will award 21 COFUND fellowships

The International Iberian Nanotechnology Laboratory (INL) will award 21 COFUND NanoTRAINforGrowth Fellowships. The fellowship programme supports promising postdoctoral researchers in their academic career development through integration into research groups, facilitating new co-operations in a stimulating and interdisciplinary research environment. Successful candidates will have the opportunity to plan a research project and work on their own research idea, at INL´s facilities. The Cofund fellowships will be awarded in the main focus areas of INL, respectively Nanomedicine (emphasis on cancer research) and Nanotechnologies for food safety and environmental control. The programme will also provide training on leadership and communication skills, project management and on obtaining research funding. INL´s NanoTRAINforGrowth fellowship programme will allow international researchers to develop their work over a period of two years.Researchers will be selected through a competitive call, expected to be launched in January 2013. The NanoTRAINforGrowth fellowship programme will run for four years (2013 – 2016) with an overall budget of 3.3M€ and is co-financed by the Marie Curie Actions of the European Union.

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Ministers of Science of Portugal and People’s Republic of China visited the INL

Ministers of Science of Portugal and People’s Republic of China visited the INL

The Portuguese Minister of Education and Science of Portugal, Nuno Crato, and the Minister of Science and Technology, of the People’s Republic of China, Wan Gang, visited the International Iberian Nanotechnology Laboratory. After a short meeting with the aim of presenting to the Chinese delegation the INL project, a state-of-the-art facility, fully dedicated to nanotechnology and nanosciences, the two ministers visited the laboratories dedicated to nanomaterial’s, energy storage and conversion, nanochemistry and nanoparticle synthesis , spintronics and magnetometry. In the last two laboratories the Chinese Minister of Science had the chance to meet two Chinese researchers who are developing their work at INESC-MN, in collaboration with INL. The tour through the facilities, guided by INL’s the director-general, José Rivas, and deputy director general, Paulo Freitas included also the high accuracy laboratories where the Minister of Science and Technology Wan Gang took a closer look at the transmission electron microscopy (TEM), the scanning electron microscopy (STEM), as well as the focus ion beam (FIB). Nanotechnology is one of the areas included in the memorandum of understanding signed between the government of People’s Republic of China and Portugal to promote collaborative research.

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Nobel Laureate Harold Kroto gave lecture at INL

Nobel Laureate Harold Kroto gave lecture at INL

Sir Harold Kroto, one of the co-recipients of the 1996 Nobel Prize in Chemistry delivered (June 1st) at INL, in Braga (Portugal) a lecture entitled «Carbon in Nano and Outer Space». The Nobel laureate stressed the importance of improving the general level of scientific understanding and awareness worldwide. «Acceptance of the truth» should go hand in hand with «understanding the truth». Harold Kroto invited the young scientists in the audience to address present challenges and to think out of the box, to focus their creativity and commitment in the subject they feel genuinely passionate about. Referring to the importance of the discovery of penicillin and anaesthetics and its impact on the improvement of human well-being, Kroto directed the attention to a present challenge: the decreasing effectiveness of antibiotics. Prof. Kroto began his lecture telling the story of his and his colleagues’ odyssey towards the discovery of C60. In 1970 his research group conducted laboratory began spectroscopic studies on long linear carbon chain molecules with colleague David Walton. This research led to radio astronomy searches with Takeshi Oka and Canadian astronomers (Lorne Avery, Norman Broten and John McLeod) at the National Research Council in Canada which made the surprising discovery that […]

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The Princes of Asturias visited INL

The Princes of Asturias visited INL

Their Royal Highnesses the Princes of Asturias, Felipe de Borbón y Grécia, and Letizia Ortiz Rocasolano visited the International Iberian Nanotechnology Laboratory on the 31st of May. The visit was part of the official tour of the Royal Couple to the Republic of Portugal, from May 30th to June 1st, 2012.

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More than 160 students applied for the 2012 INL Summer Scholarships

More than 160 students applied for the 2012 INL Summer Scholarships

More than 160 students applied for an opportunity to work closely with INL researchers. Starting late June, the second edition of INL summer courses will offer 20 students from Portugal and Spain hands-on training in advanced research projects with INL scientists for two months. Scholars will have the opportunity of sharing the initial research steps of an international and multidisciplinary community working on nanotechnology projects, formed by scientists and engineers from all over the world. All candidates will be informed before the end of May about the outcome of their scholarship application.

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INL installs LPX Pegasus ASE, a Deep Silicon Etch (DRIE) with a broad range of challenging applications

INL installs LPX Pegasus ASE, a Deep Silicon Etch (DRIE) with a broad range of challenging applications

Advanced Silicon Etch (ASE) is a deep reactive ion etching (DRIE) technique used to rapidly etch deep and high aspect ratio structures in silicon. LPX Pegasus is the continuation of STS’ Advanced Silicon Etch (ASE) technology. Through an in-depth understanding of the Bosch process and with the required hardware, Pegasus is able to provide excellent profile control and selectivity. The increased etch rate and improved uniformity lead to higher throughput and device yield, resulting in increased productivity. This inductively de-coupled plasma (IDP) system uses fluorine-based gases for anisotropic deep silicon trench etching. The 13.56 MHz RF power supply produces high-density, low-pressure, low-energy plasma. This type of plasma allows high selectivity and aspect ratio etching for depths greater than 150 microns and has an expected etch rate better than 15 microns/ min. Used primarily for MEMs devices, the typical materials used in this etcher are silicon wafers covered with photoresist and thin films of silicon dioxide and silicon nitride. The performance improvements that Pegasus brings have numerous benefits for research as well as for end-users. At the moment, the tool is being installed in the INL’s facilities and it is expected that the final validation process will take place the first […]

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